Work

Transport Properties of Electrons in Inverted Silicon Surfaces

Year: 1968

Type: article

Source: Physical Review

DOI: 10.1103/physrev.169.619

Authors: F. F. Fang, A. B. Fowler

Institutions: IBM (United States), IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1985607989

FWCI: 10.46

Cites: 29

Cited by: 333

Related to: 10