Work

Insulator to Semimetal Transition in Graphene Oxide

Year: 2009

Type: article

Abstract: Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator−semiconductor−semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.

Source: The Journal of Physical Chemistry C

DOI: 10.1021/jp9051402

Authors: Goki Eda, Cecilia Mattevi, Hisato Yamaguchi, HoKwon Kim, Manish Chhowalla

Institution: Rutgers, The State University of New Jersey

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Engineering and Physical Sciences Research Council

Award: Building New Capability in Structural Ceramics