Work

Observation of Raman emission in silicon waveguides at 154 µm

Year: 2002

Type: article

Abstract: We report the first measurements of spontaneous Raman scattering from silicon waveguides. Using a 1.43 m pump, both forward and backward scattering were measured at 1.54 m from Silicon-On-Insulator (SOI) waveguides. From the dependence of the Stokes power vs. pump power, we extract a value of (4.1 +/- 2.5) x 10-7 cm-1 Sr-1 for the Raman scattering efficiency. The results suggest that a silicon optical amplifier is within reach. The strong optical confinement in silicon waveguides is an attractive property as it lowers the pump power required for the onset of Raman scattering. The SiGe material system is also discussed.

Source: Optics Express

DOI: 10.1364/oe.10.001305

Authors: Ricardo Claps, Dimitri Dimitropoulos, Yan Han, Bahram Jalali

Institution: University of California, Los Angeles

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funder: Defense Advanced Research Projects Agency