Work

Bias-dependence of the tunneling electroresistance and magnetoresistance in multiferroic tunnel junctions

Year: 2014

Type: article

Abstract: We predict that the tunneling electroresistance effect is present at finite bias even in multiferroic tunnel junctions (MFTJs) with inversion symmetry. The effect is highly sensitive to the relative magnetization orientation in the electrodes. In addition, we demonstrate control of the bias-dependence of the tunneling magnetoresistance (TMR) in MFTJs via switching of the ferroelectric polarization of the barrier. The polarization induces a monotonic bias behavior in TMR which can be reversed by polarization switching. The magnitude of both effects is proportional to the polarization. The underlying mechanism is the inversion symmetry breaking due to the polarization combined with the interplay of the bias-induced and polarization-induced spin-dependent interfacial screening. These results expand the possibilities for the next-generation multifunctional devices.

Source: Applied Physics Letters

DOI: 10.1063/1.4895537

Authors: Artur Useinov, Alan Kalitsov, Julian Velev, Nicholas Kioussis

Institutions: University of Nebraska–Lincoln, California State University, Northridge, University of Puerto Rico System

Language: English

Topic: Multiferroics and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funder: National Science Foundation

Awards: NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems TANMS, Nanotechnology from Basic Science to Emerging Applications: Institute for Functional Nanomaterials (IFN), Predictive Modeling of Organic-based Magnetic and Multiferroic Tunnel Junctions