Year: 1979
Type: conference-abstract
Abstract: Fabrication technology for integrated Josephson tunneling switching devices was investigated. A new superconducting ground plane with SiO 2 overlying insulation was found to assure an excellent switching circuit performance. An rf plasma exposure technique, In and Au addition into Pb base electrodes, and SiO passivation were demonstrated to be quite effective for fabricating unform and high current density Josephson devices with remarkably improved thermal cycling stability. Tunneling and switching threshold characteristics of fabricated devices were evaluated at 4.2 K, from which some circuit design parameters were derived. Josephson penetration depth λ J of 12 µm, Josephson current density j J of 800 A/cm 2 , London penetration depth λ 1 +λ 2 of 220 nm, and junction capacitance per unit area of 0.02 pF/µm 2 were typically obtained.
Authors: Kenichi Kuroda, Takao Waho, Hajime Yamada, Akira Ishida
Institution: NTT (Japan)
Language: English
Subfield: Astronomy and Astrophysics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1986341554