Work

Atomic structure of the epitaxial Al–Si interface

Year: 1986

Type: article

Source: Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties

DOI: 10.1080/01418618608245295

Authors: F. K. Legoues, W. Krakow, P. S. Ho

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1986459660

FWCI: 3.52

Cites: 11

Cited by: 84

Related to: 10