Year: 2014
Type: article
Abstract: We studied the crystal structure and thermoelectric properties of polycrystalline GeInxSb6−xTe10 (x = 0, 0.18, 0.3, and 0.6). Rietveld and Le Bail analyses showed that all compositions crystallized in trigonal structures with a 51-layer period. Substituting In decreased both the lattice and electronic thermal conductivity, as well as markedly increased the Seebeck coefficient. We ascribed this increase to increases in the effective mass of the carriers, likely caused by the formation of additional energy states near the Fermi level. In GeIn0.6Sb5.4Te10, we found a maximum ZT of 0.75 at 710 K, 1.9 times higher than that of GeSb6Te10.
Source: APL Materials
DOI: 10.1063/1.4893236
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,200
OpenAlex ID: W1986635913