Year: 2007
Type: conference-paper
Abstract: The batch-growth of linear-shaped single CNFs onto commercially available Si cantilevers (3–9 chips / batch) using the ion-irradiation method was challenged, and the growth parameters were optimized in terms of the sample temperature (up to 70°C) and the ion-irradiation time. In every growth condition tested here, the batch-fabrication of CNF probes was achieved. The length and the growth direction of CNFs were controllable well with the ion-irradiation time and the ion-incidence angle, respectively. Thus, oriented and linear-shaped single CNFs, even longer than 1 μm in length, were attainable. Under the optimized growth condition, CNFs were batch-grown uniformly in length with the standard deviation of less than ∼10 %. CNFs showed almost no temperature dependence in growth rate, and fine CNFs tended to grow for short irradiation duration. Since AFM images of Si grating were attained repeatedly with a good image resolution using CNF probes thus batch-fabricated, the ion-irradiation method was believed to be quite promising to prepare practical CNF probes.
Authors: J Tanaka, M Kitazawa, M Tanemura, R Ohta
Institutions: Nagoya Institute of Technology, Olympus (Japan)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W1987023232