Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces
Year: 2010
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.3374333
Authors: J. Meyer, A. Shu, M. Kröger, A. Kahn
Institution: Princeton University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: U.S. Department of Energy
OpenAlex ID: W1987201745