Year: 2011
Type: article
Abstract: We present the use of direct bonded copper (DBC) for the straightforward fabrication of high power atom chips. Atom chips using DBC have several benefits: excellent copper/substrate adhesion, high purity, thick (>100 μm) copper layers, high substrate thermal conductivity, high aspect ratio wires, the potential for rapid (<8 h) fabrication, and three-dimensional atom chip structures. Two mask options for DBC atom chip fabrication are presented, as well as two methods for etching wire patterns into the copper layer. A test chip, able to support 100 A of current for 2 s without failing, is used to determine the thermal impedance of the DBC. An assembly using two DBC atom chips is used to magnetically trap laser cooled (87)Rb atoms. The wire aspect ratio that optimizes the magnetic field gradient as a function of power dissipation is determined to be 0.84:1 (height:width).
Source: Review of Scientific Instruments
DOI: 10.1063/1.3529434
Authors: Matthew B. Squires, James A. Stickney, Evan J. Carlson, Paul M. Baker, Walter R. Buchwald, Sandra Wentzell, Steven M. Miller
Institution: United States Air Force Research Laboratory
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1987928951