Work

Sn-based type-VIII single-crystal clathrates with a large figure of merit

Year: 2012
Type: article
Abstract: Single-crystal samples of type-VIII Ba 8 Ga 16− x Cu x Sn 30 ( x = 0, 0.03, 0.06, 0.15) clathrates were prepared using the Sn-flux method. At room temperature the carrier density, n , is 3.5–5 × 10 19 cm −3 for all the samples, the carrier mobility, μ H , increases to more than twice that of Ba 8 Ga 16 Sn 30 for all the Cu doping samples, and consequently the electrical conductivity is enhanced distinctly from 1.90 × 10 4 S/m to 4.40 × 10 4 S/m, with the Cu composition increasing from x = 0 to x = 0.15. The Seebeck coefficient, α, decreases slightly with the increases in Cu composition. The κ values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x = 0 and x = 0.03. The lattice thermal conductivity, κ L , decreases from 0.59 W/mK for x = 0 to 0.50 W/mK for x = 0.03 at 300 K. The figure of merit for x = 0.03 reaches 1.35 at 540 K.
Language: English
Open Access status: bronze
OpenAlex ID: W1988393041
FWCI: 0.391
Cites: 24
Cited by: 12
Related to: 10