Year: 1978
Type: article
Abstract: Using the Fair‐Tsai model of P diffusion in Si, equations have been derived which relate the total P concentration, electron concentration, sheet resistance, and junction depth of a P‐diffused layer. Curves are presented which show surface concentration as a function of the product, percentage of electrically active P as a function of surface concentration, and vs. for P‐implant doses ranging from .
DOI: 10.1149/1.2131438
Author: Richard B. Fair
Institution: AT&T (United States)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1990319799