Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
Year: 2002
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1446212
Institutions: Carnegie Mellon University, ABB (Sweden)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1990374314