Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
Year: 2008
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2838380
Institution: Samsung (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1990798163