Work

X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1−xN/GaN superlattice structures

Year: 2011

Type: article

Abstract: The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown Al x Ga 1− x N/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction ( x = 0.25) and thin well width has a rather smooth surface for the R rms of AFM data value is 0.45 nm.

Source: Journal of Semiconductors

DOI: 10.1088/1674-4926/32/4/043006

Authors: Yuanzhang Wang, Jinchai Li, Shuping Li, Hangyang Chen, Dayi Liu, Junyong Kang

Institutions: Xiamen University, Xiamen University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze