MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility
Work
Year: 2006
Type: article
Abstract: Ultrafast operation of a transistor using ballistic electron concepts and its fabrication feasibility are shown by Monte Carlo simulation and experiment, respectively. The transistor consists of InP/G... more
Institution Tokyo Institute of Technology
Cites: 8
Cited by: 4
Related to: 10
FWCI: 0.911
Citation percentile (by year/subfield): 55.95
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Sustainable Development Goal Affordable and clean energy
Open Access status: gold