Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon
Year: 2009
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.3079524
Institution: University of Illinois Urbana-Champaign
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1991824621