Carrier lifetime versus ion-implantation dose in silicon on sapphire
Year: 1987
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.98173
Authors: F. E. Doany, D. Grischkowsky, C.-C. Chi
Institution: IBM Research - Thomas J. Watson Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1991991568