Work

Directed self-assembly of block copolymers for next generation nanolithography

Year: 2013

Type: article

Abstract: Directed self-assembly of block copolymers has received a great deal of research attention as a promising nanolithography to complement the intrinsic limitations of conventional photolithography. In this review, we highlight the recent progress in the development of the directed self-assembly process for practical utilization in semiconductor applications. Various advanced directed self-assembly approaches are examined, in which block copolymer self-assembly is synergistically integrated with conventional photolithography, such as ArF lithography or I-line lithography, via either epitaxial self-assembly or the graphoepitaxy principle. We focus on the practical advantages anticipated from directed self-assembly integration, such as pattern density multiplication, feature size uniformity improvement, line edge roughness reduction, as well as cost reduction. Additionally, a direction for future research on directed self-assembly is suggested with diverse potential applications.

Source: Materials Today

DOI: 10.1016/j.mattod.2013.11.002

Authors: Seong-Jun Jeong, Ju Young Kim, Bong Hoon Kim, Hyoung-Seok Moon, Sang Ouk Kim

Institutions: Samsung (South Korea), Samsung Electronics (South Korea), Korea Advanced Institute of Science and Technology, Institute for Basic Science, University of Illinois Urbana-Champaign

Language: English

Topic: Block Copolymer Self-Assembly

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $6,070

Funder: Institute for Basic Science