Work

Antiferroelectricity in thin-film ZrO2 from first principles

Year: 2014

Type: article

Abstract: Recently antiferroelectric-like double-hysteresis loops have been experimentally reported in ZrO${}_{2}$, but the mechanism for this behavior has been unclear. In this work, the authors use first-principles calculations to show that antiferroelectricity is an intrinsic property of ZrO${}_{2}$ that appears via a previously unrecognized mechanism where the polarization is stabilized by zone-boundary modes.

Source: Physical Review B

DOI: 10.1103/physrevb.90.140103

Authors: Sebastian E. Reyes-Lillo, Kevin F. Garrity, Karin M. Rabe

Institution: Rutgers, The State University of New Jersey

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: Vanderbilt University, Pennsylvania State University, Comisión Nacional de Investigación Científica y Tecnológica, Office of Naval Research

Award: G2151482156