Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN superlattice
Year: 2001
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.915597
Authors: J.K. Sheu, G.C. Chi, M.J. Jou
Institutions: National Central University, Epistar (Taiwan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1993863056