Year: 1992
Type: article
Abstract: We have designed and operated a device consisting of three nanoscale tunnel junctions biased below the Coulomb gap. Phase shifted r.f. voltages of frequency f applied to two gates "pump" one electron per cycle through the device. This is shown experimentally by plateaus in the current-voltage characteristic at I = ± ef , the sign of the current depending on the relative phase of the r.f. voltages and not on the sign of the bias voltage.
Source: Europhysics Letters (EPL)
Authors: H Pothier, P Lafarge, C Urbina, D Esteve, M. H Devoret
Institution: Service de Physique de l'État Condensé
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1994344136