Influence of Ti-Doping on the Thermoelectric Properties of ZnO:Al Thin Films
Year: 2013
Type: article
Abstract: Ti doped aluminum zinc oxide thin film was prepared by DC reaction magnetron sputtering method on the transparent glass substrates. The structure and thermoelectric performance of the deposited (TAZO) thin films are studied by various methods. XRD pattern shows that the TAZO thin film exhibits hexagonal wurtzite structure. After Ti-doping, the thermoelectric properties of TAZO thin film significantly improved at room temperature. The TAZO thin film has the maximum conductivity of 8.33×104 S/m and the Seebeck coefficient absolute value of 34 μV/K, which is respectively larger than that of the corresponding values.
Source: Advanced materials research
Institution: Shenzhen University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W1994636769