Work

Quantitative theory of retarded base diffusion in silicon NPN structures with arsenic emitters

Year: 1972

Type: conference-abstract

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1972.249320

Author: R.B. Fair

Institution: AT&T (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1995122731

Cites: 3

Cited by:

Related to: 10