Work

Inversion layer on the Ge(001) surface from the four-probe conductance measurements

Year: 2014

Type: article

Abstract: We report four-probe conductance measurements with sub-micron resolution on atomically clean Ge(001) surfaces. A qualitative difference between n-type and p-type crystals is observed. The scaling behavior of the resistance on n-type samples indicates two-dimensional current flow, while for the p-type crystal a three-dimensional description is appropriate. We interpret this in terms of the formation of an inversion layer at the surface. This result points to the surface states, i.e., dangling bonds, as the driving force behind band bending in germanium. It also explains the intrinsic character of band bending in germanium.

Source: Applied Physics Letters

DOI: 10.1063/1.4891858

Authors: Mateusz Wojtaszek, Jakub Lis, Rafal Zuzak, Bartosz Such, Marek Szymonski

Institution: Jagiellonian University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1995207142

FWCI: 1.502

Cites: 15

Cited by: 18

Related to: 10