The Diffusion of Ion‐Implanted Arsenic in Silicon
Year: 1975
Type: article
DOI: 10.1149/1.2134111
Authors: Richard B. Fair, Joseph C. C. Tsai
Institution: Dextra Laboratories (United Kingdom)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1995209513