Year: 1997
Type: article
Abstract: The effect of diffusional relaxation on the random sequential deposition process is studied in the limit of fast deposition. Expressions for the coverage as a function of time are analytically derived for both the short-time and long-time regimes. These results are tested and compared with numerical simulations.
Authors: Eli Eisenberg, Asher Baram
Institutions: Bar-Ilan University, Soreq Nuclear Research Center
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1995241022