Work

Effects of doping, electron irradiation, H+and He+implantation on the thermoelectric properties of Bi2Se3single crystals

Year: 2005

Type: article

Abstract: As-grown single crystals of Bi 2 Se 3 are doped with varying percentages of tellurium. These crystals are irradiated and implanted with electrons of energy 8 MeV and H + and He + ions of energy 1.26 MeV for comparative studies on their properties. Effects on the thermoelectric properties of Bi 2 Se 3 due to high-energy electron bombardment (8 MeV), H + and He + ion implantation and doping are studied at temperatures ranging from 150 to 380 K. Crystal homogeneity and surface dislocations are determined using EDAX and SEM. Hot-probe and Hall effect measurements show that as-grown, electron irradiated and ion implanted crystals are n-type. Thermal diffusivity measurements prove the effective scattering mechanism (phonons) in Bi 2 Se 3 crystals and provide a valid reason for reduced thermo-power in doped crystals.

Source: Journal of Physics Condensed Matter

DOI: 10.1088/0953-8984/17/19/005

Authors: Augustine Saji, S Ampili, Seong-Ho Yang, Kang Jeung Ku, Mathai Elizabeth

Institutions: Korea Advanced Institute of Science and Technology, Cochin University of Science and Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

Funder: Indian Institute of Science