Work

Ohmic contacts to n-GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

Year: 1981

Type: article

Source: Journal of Vacuum Science and Technology

DOI: 10.1116/1.571074

Authors: J. M. Woodall, J. L. Freeouf, G. D. Pettit, T. Jackson, P. Kirchner

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1995866090

FWCI: 2.01

Cites:

Cited by: 196

Related to: 9