Work

Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy

Year: 1980

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(80)90164-1

Authors: Th. Englert, G. Abstreiter, J. Pontcharra

Institutions: Max Planck Society, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1996815969

FWCI: 3.958

Cites: 9

Cited by: 227

Related to: 10