Work

Metal semiconductor field effect transistor based on single crystal GaN

Year: 1993

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.109549

Authors: M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, D. T. Olson

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1996846925

FWCI: 11.24

Cites: 12

Cited by: 375

Related to: 10