Work

Charge Accumulation at InAs Surfaces

Year: 1996

Type: article

Source: Physical Review Letters

DOI: 10.1103/physrevlett.76.3626

Authors: L. Ö. Olsson, C. B. M. Andersson, M. C. Håkansson, J. Kanski, L. Ilver, U. O. Karlsson

Institutions: Chalmers University of Technology, KTH Royal Institute of Technology, Lund University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1996869852

FWCI: 6.871

Cites: 15

Cited by: 310

Related to: 10