Year: 2003
Type: article
Abstract: Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to $80\text{ }\mathrm{k}\mathrm{V}\text{ }{\mathrm{c}\mathrm{m}}^{\ensuremath{-}1}$ at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below $20\text{ }\mathrm{k}\mathrm{V}\text{ }{\mathrm{c}\mathrm{m}}^{\ensuremath{-}1}$ reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
Source: Physical Review Letters
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1997093762