Work

Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap

Year: 2014

Type: article

Source: Nano Research

DOI: 10.1007/s12274-014-0430-2

Authors: Pingan Hu, Jia Zhang, Mina Yoon, Xiao-Fen Qiao, Xin Zhang, Wei Feng, Pingheng Tan, Wei Zheng, Jingjing Liu, Xiaona Wang, Juan C. Idrobo, David B. Geohegan, Kai Xiao

Institutions: Harbin Institute of Technology, Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1998379105

FWCI: 7.138

Cites: 37

Cited by: 173

Related to: 10