Work

Summary Abstract: Schottky barrier formation at Pd/Si(111) and V/Si(111) interfaces

Year: 1982

Type: article

Source: Journal of Vacuum Science and Technology

DOI: 10.1116/1.571797

Authors: R. Purtell, J. G. Clabes, G. W. Rubloff, P. S. Ho, B. Reihl, F. J. Himpsel

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1998622708

FWCI: 3.887

Cites:

Cited by: 19

Related to: 10