Work

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Year: 2013

Type: article

Source: IEEE Journal of Solid-State Circuits

DOI: 10.1109/jssc.2013.2280296

Authors: Tz-yi Liu, Tian Hong Yan, Roy Scheuerlein, Yingchang Chen, Jeffrey KoonYee Lee, Gopinath Balakrishnan, Gordon Yee, Henry Zhang, Alex Yap, Jingwen Ouyang, Takahiko Sasaki, Ali Al-Shamma, Chinyu Chen, Mayank Gupta, Greg Hilton, Achal Kathuria, Vincent Lai, Masahide Matsumoto, Anurag Nigam, Anil Pai, Jayesh Pakhale, Chang Hua Siau, Xiaoxia Wu, Yibo Yin, Nicolas Nagel, Yoichiro Tanaka, Masaaki Higashitani, Tim Minvielle, Chandu Gorla, Takayuki Tsukamoto, Takeshi Yamaguchi, Mutsumi Okajima, Takayuki Okamura, Satoru Takase, Hirofumi Inoue, Luca Fasoli

Institutions: Elixir Medical (United States), Toshiba (Japan), Kanagawa Prefecture Medical Association, Kanagawa Prefectural Government, Iwaki City Medical Center

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Kanazawa University, Stanford Engineering

OpenAlex ID: W1999458342

FWCI: 7.809

Cites: 21

Cited by: 182

Related to: 10