Work

Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

Year: 2013

Type: article

Abstract: We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

Source: Optics Express

DOI: 10.1364/oe.21.004908

Authors: Philipp Tonndorf, Robert Schmidt, Philipp Böttger, Xiao Zhang, Janna Börner, Andreas Liebig, Manfred Albrecht, Christian Kloc, Ovidiu Gordan, Dietrich R. T. Zahn, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch

Institutions: Chemnitz University of Technology, Nanyang Technological University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

OpenAlex ID: W1999476436

FWCI: 42.17

Cites: 40

Cited by: 1,538

Related to: 9