Year: 2014
Type: article
Abstract: We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29–0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.
Source: Applied Physics Letters
DOI: 10.1063/1.4864082
Institutions: Scuola Normale Superiore, Istituto Nanoscienze, National Enterprise for NanoScience and NanoTechnology, Centre National de la Recherche Scientifique, Laboratoire Charles Coulomb, Université Montpellier 2, University of Cambridge, Cambridge University Press, Italian Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Awards: G2544518203, G2960223313, Graphene Flexible Electronics and Optoelectronics, Graphene-Based Revolutions in ICT And Beyond, Graphene Flexible Electronics and Optoelectronics: Bridging The Gap Between Academia and Industry, Ultra thin glass membranes for advanced, adjustable and affordable quadruple glazing windows for zero-energy buildings
OpenAlex ID: W1999488580