The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation
Year: 1989
Type: article
Source: Journal of Electronic Materials
DOI: 10.1007/bf02657400
Authors: Yudong Kim, Hisham Z. Massoud, Richard B. Fair
Institutions: Duke University, MCNC Research and Development Institute
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1999848689