Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
Year: 2000
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.126456
Authors: Q. Wahab, A. Ellison, A. Henry, E. Janzén, C. Hallin, J. Di Persio, R. Martinez
Institutions: Linköping University, ABB (Sweden)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2000235032