Work

Large Thermoelectric Response of Ti-Containing Perovskite Oxides

Year: 2007

Type: article

Abstract: Nb-content dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on (100)-face of LaAlO3 single crystal substrates by a pulsed-laser deposition. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT reached 0.37 (20%-Nb-doped SrTiO3 epitaxial film) at 1000 K, which is the largest value among n-type oxide semiconductors ever reported.

Source: Key engineering materials

DOI: 10.4028/www.scientific.net/kem.336-338.809

Authors: Hiromichi Ohta, Shingo Ohta, Kunihito Koumoto

Institution: Nagoya University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funder: National Institute of Advanced Industrial Science and Technology

OpenAlex ID: W2000976380

FWCI:

Cites: 17

Cited by: 1

Related to: 10