Work

Resistance drift in phase change memory

Year: 2012

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps.2012.6241871

Authors: Jing Li, Binquan Luan, Chung Lam

Institutions: IBM (United States), IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2001047056

FWCI: 12.76

Cites: 28

Cited by: 60

Related to: 10