Year: 1996
Type: article
Abstract: The n type thermoelectric semiconductor of Bi2Se0.6Te2.4 + 0.01 mass% SbI3 was prepared by mechanical alloying using a vibration mill in a rare gas atmosphere and hot pressing. A thermoelectric module was assembled using 8 couples of prepared p-n elements. The figure of merit of the n type semiconductor was approximately 1.2×10−3 (1/K) at 400K. The nickel electrode of the thermoelectric module generated 0.14W when the temperature difference between the cold and the hot sides was 110K.
Source: Materials Transactions JIM
Authors: K. Hasezaki, A. Yamada, H. Tsukuda, M. Araoka
Institution: Mitsubishi Heavy Industries (Japan)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2001148954