Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction
Year: 2008
Type: article
Source: Ultramicroscopy
Authors: H.H. Liu, X.F. Duan, Qiuxia Xu, Bang-Gui Liu
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2002012373