Static-noise margin analysis of MOS SRAM cells
Year: 1987
Type: article
Authors: E. Seevinck, F.J. List, J. Lohstroh
Institutions: Philips (Netherlands), Signify (Netherlands)
Language: French
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2002612140