Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C
Year: 2010
Type: article
Source: Thin Solid Films
Authors: M.M.R. Howlader, F. Zhang
Institution: McMaster University
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2002940876