Work

Random Dopant Fluctuation Induced Variability in Undoped Channel Si Gate all Around Nanowire n-MOSFET

Year: 2015

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2014.2383352

Authors: Kaushik Nayak, Samarth Agarwal, Mohit Bajaj, Kota V. R. M. Murali, Valipe Ramgopal Rao

Institutions: Indian Institute of Technology Bombay, IBM (India)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003064544

FWCI: 2.725

Cites: 17

Cited by: 63

Related to: 10