Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique
Year: 2013
Type: article
Abstract: Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350 °C. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 (Ω·cm) −1 . So the best results are achieved in Al doped ZnO film with 3 wt%.
Source: Journal of Semiconductors
Institutions: University of Eloued, University of Biskra
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2003216591