Work

Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs

Year: 2014

Type: article

Abstract: This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from $-25^{\circ}C$ to $125^{\circ}C$ . The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.

Source: Journal of Power Electronics

DOI: 10.6113/jpe.2014.14.4.788

Authors: Yu Wu, Yaojie Sun, Yandan Lin

Institution: Fudan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: bronze

Funders: National Natural Science Foundation of China, Fudan University