Work

Subquarter-micrometreelevated source-and-drain MOSFET structureusing polysilicon spacers

Year: 1994

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19941068

Authors: M.R. Mirabedini, S.H. Goodwin-Johansson, H.Z. Massoud, R.B. Fair

Institution: Duke University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003511907

FWCI:

Cites: 5

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Related to: 10